XP161A1265PR-G mosfet equivalent, power mosfet.
Low On-State Resistance : Rds(on)=0.055Ω@ Vgs=4.5V
: Rds(on)=0.095Ω@ Vgs=2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 2.5V
N-Chann.
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
*PIN CO.
The XP161A1265PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in.
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